2.3 Finding (point) Defects in (nitride-based) Device Structures using TEM Imaging Techniques
نویسنده
چکیده
Within the last five years material characterization through transmission electron microscopy (TEM) imaging has advanced to a point where identification of single defects is attainable. Novel capabilities of device structure characterization is demonstrated here. The degradation of AlGaN/GaN:Si HEMTs is investigated, defects identified and contamination elements localized.
منابع مشابه
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